| PART |
Description |
Maker |
| MGFC39V3436 C393436 |
3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
From old datasheet system
3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SY58034U |
6GHz, 1:6 CML FANOUT BUFFER WITH 2:1 MUX INPUT AND INTERNAL I/O TERMINATION 6GHz:6扇出缓冲器与白血:1 MUX输入和内部的I / O终止
|
Micrel Semiconductor, Inc.
|
| LX5503-LQ |
InGaP HBT 5-6GHz Power Amplifier 5150 MHz - 5850 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
Microsemi, Corp.
MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP
|
| MGA-545P8 MGA-545P8-TR2 MGA-545P8-TR2G |
50 MHz - 7000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
MGA-545P8 · Low Current 22dBm Medium Power Amplifier In LPCC2x2 for 5-6GHz systems
|
Agilent Technologies, Inc.
Agilent (Hewlett-Packard)
|
| MGFS36E3436A MGFS36E3436A10 |
3.4-3.6GHz HBT HYBRID IC
|
Mitsubishi Electric Semiconductor
|
| TPD02-0.5G06BS |
0.5-6GHz 2-Way Power Divider
|
Transcom, Inc.
|
| SZM-3166Z SZM-3166Z-EVB1 |
3.3-3.6GHz 2W Power Amplifier
|
http://
SIRENZA MICRODEVICES
|
| CHT4012-QDG |
DC-6GHz 6-BIT DIGITAL ATTENUATOR
|
United Monolithic Semiconductors
|
| MGFS39E3336-01 |
3.3-3.6GHz HBT Integrated Circuit
|
Mitsubishi Electric Semiconductor
|
| LTC5587 |
6GHz RMS Power Detector
|
Linear Technology
|
